Photoluminescence of Multiple GaN/AlN Quantum Wells
Author:
Publisher
Allerton Press
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
Link
https://link.springer.com/content/pdf/10.3103/S8756699021050022.pdf
Reference12 articles.
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2. M. Beeler, E. Trichas, and E. Monroy, ‘‘III-nitride semiconductors for intersubband optoelectronics: A review,’’ Semicond. Sci. Technol. 28, 074022 (2013). https://doi.org/10.1088/0268-1242/28/7/074022
3. J. M. Dawlaty, F. Rana, and W. J. Schaff, ‘‘Ultrafast all-optical switches based on intersubband transitions in GaN/AlN multiple quantum wells for Tb/s operation,’’ Mater. Res. Soc. Online Proc. Library 831, E7.3 (2005). https://doi.org/10.1557/PROC-831-E7.3
4. D. Hofstetter, E. Baumann, F. R. Giorgetta, R. Theron, H. Wu, W. J. Schaff, J. Dawlaty, P. A. George, L. F. Eastman, and F. Rana, ‘‘Photodetectors based on intersubband transitions using III-nitride superlattice structures,’’ J. Phys.: Condens. Matter 21, 174208 (2009). https://doi.org/10.1088/0953-8984/21/17/174208
5. F. Bernardini, V. Fiorentini, and D. Vanderbilt, ‘‘Spontaneous polarization and piezoelectric constants of III-V nitrides,’’ Phys. Rev. B 56, R10024(R) (1997). https://doi.org/10.1103/PhysRevB.56.R10024
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