Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire-Reference-Cited by-同舟云学术

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Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire

Published:2013-09 Issue:5 Volume:9 Page:587-592
ISSN:1738-8090
Container-title:Electronic Materials Letters
language:en
Short-container-title:Electron. Mater. Lett.

Author:

Lee Yong Seok,Kim Hun,Seo Tae Hoon,Park Ah Hyun,Lee Seul Be,Chung Sang Jo,Choi Chel-Jong,Suh Eun-Kyung

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s13391-013-3065-7.pdf

Reference32 articles.

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2. C. Chen, V. Adivarahan, J. Yang, M. Shatalov, E. Kuokstis, and M. A. Khan, Jpn. J. Appl. Phys. 42, L1039 (2003).

3. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, Appl. Phys. Lett. 84, 3663 (2004).

4. M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, Jpn. J. Appl. Phys. 47, 119 (2008).

5. S. M. Hwang, Y. G. Seo, K. H. Baik, I. Cho, J. H. Baek, S. Jung, T. G. Kim, and M. Cho, Appl. Phys. Lett. 95, 071101 (2009).

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1. Improved characteristics of (11 2‾2) plane AlGaN films grown on SiNx interlayer;Materials Science in Semiconductor Processing;2024-10

2. Joint effect of miscut r-plane sapphire substrate and different nucleation layers on structural characteristics of non-polar a-plane GaN films;CrystEngComm;2023

3. Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer*;Chinese Physics Letters;2020-03-01

4. Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate;CrystEngComm;2019

5. Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate;Applied Physics Express;2018-11-26

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