Ion‐bombardment‐induced transfer of H from N to Si in amorphous Si3N4-Reference-Cited by-同舟云学术

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Ion‐bombardment‐induced transfer of H from N to Si in amorphous Si3N4

Published:1978-03-15 Issue:6 Volume:32 Page:379-380
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stein H. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.90053

Reference8 articles.

1. See for example the following in Electrochem. Soc. Extended Abstracts 77‐2 (1977):

2. Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on Annealing

3. Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on Annealing

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3. Silicon Nitride (Si3N4) (Noncrystalline);Handbook of Optical Constants of Solids;1997

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