Metallic doping: a new strategy for suppressing shallow-trap centers in vertically stacked charge-trapping flash memories-Reference-Cited by-同舟云学术

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Metallic doping: a new strategy for suppressing shallow-trap centers in vertically stacked charge-trapping flash memories

Published:2020-03-19 Issue:4 Volume:13 Page:044001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wang Fei,Wu Jixuan,Li Yuan,Cao Rui,Chen Jiezhi

Funder

National Natural Science Foundation of China

China Key Research and Development Program

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab7e0b/pdf

Reference35 articles.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations;IEEE Transactions on Electron Devices;2023-10

2. Vertical Charge Loss Induced by Defect Coupling at SiO₂/Si₃N₄ Interface in 3D NAND Flash Memory;2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT);2023-07-21

3. The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices;Nano Letters;2023-03-13

4. Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films;IEEE Electron Device Letters;2023-01

5. A Review on the Types, Performance and Environmental Protection of Filling & Plugging Materials for Prevention and Control of Coal Spontaneous Combustion in China;Combustion Science and Technology;2022-10-17

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