Pyramidal structural defects in erbium silicide thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2162862
Reference15 articles.
1. Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors
2. Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor
3. Kinetics and morphology of erbium silicide formation
4. Comparison of the three classes (rare earth, refractory and near-noble) of silicide contacts
5. Growth of rare earth silicides on silicon
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1. Analysis of Structural, Optical, and Aquaphobic Properties of Zirconium Oxide Nanofilms by Varying Sputtering Gas;Advances in Materials Science and Engineering;2022-01-30
2. Doping and strain effects on the microstructure of erbium silicide on Si:P;Journal of Alloys and Compounds;2017-12
3. Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer;ACS Applied Materials & Interfaces;2014-08-14
4. Silicide Formation Process of Er Films with Ta and TaN Capping Layers;ACS Applied Materials & Interfaces;2013-11-25
5. Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer;Thin Solid Films;2012-04
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