Silicide Formation Process of Er Films with Ta and TaN Capping Layers
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
2. Department of Electrical Engineering, KAIST, Daejeon 305-701, Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am4041338
Reference23 articles.
1. Silicides for 22nm and Beyond
2. Use of ErSi2 in source/drain contacts of ultra-thin SOI MOSFETs
3. A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor
4. Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap
5. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
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2. Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface*;Chinese Physics Letters;2020-03-01
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4. Prediction of Stable Ruthenium Silicides from First-Principles Calculations: Stoichiometries, Crystal Structures, and Physical Properties;ACS Applied Materials & Interfaces;2015-11-25
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