Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing-Reference-Cited by-同舟云学术

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Published:2009-05-11 Issue:19 Volume:94 Page:191913
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Reckinger Nicolas,Bayot Vincent,Yarekha Dmitri A.,Dubois Emmanuel,Godey Sylvie,Wallart Xavier,Larrieu Guilhem,Łaszcz Adam,Ratajczak Jacek,Jacques Pascal J.,Raskin Jean-Pierre

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3136849

Reference20 articles.

1. Electronic transport properties of epitaxial erbium silicide/silicon heterostructures

2. Conduction mechanisms in erbium silicide Schottky diodes

3. Overview and status of metal S/D Schottky-barrier MOSFET technology

4. Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations

5. Contact reaction between Si and rare earth metals

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