Conduction mechanisms in erbium silicide Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352899
Reference26 articles.
1. Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurements
2. Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurements
3. A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodes
4. Electrical and infrared investigation of erbium silicide
5. Surface morphology of erbium silicide
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1. Doping and strain effects on the microstructure of erbium silicide on Si:P;Journal of Alloys and Compounds;2017-12
2. Spatial inhomogeneity in Schottky barrier height at graphene/MoS2Schottky junctions;Journal of Physics D: Applied Physics;2017-03-27
3. The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation;AIP Advances;2015-08
4. Ultrasound influence on I–V–T characteristics of silicon Schottky barrier structure;Journal of Applied Physics;2015-01-28
5. Current–voltage–temperature characteristics of Au/p-InP Schottky barrier diode;Thin Solid Films;2013-03
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