Ultrasound influence on I–V–T characteristics of silicon Schottky barrier structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906844
Reference53 articles.
1. Improved electroluminescence performance of ZnS:Cu,Cl phosphors by ultrasonic treatment
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4. Coupling Light into Graphene Plasmons through Surface Acoustic Waves
5. The rotation of the polarization plane of quantum-well heterolasers emission under the ultrasonic strain
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