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Influence of γ-irradiation and ultrasound treatment on current mechanism in Au-SiO2-Si structure

  • Published:2020-03 Issue: Volume:165 Page:107712
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Gorb A.M.,Korotchenkov O.A.,Olikh O.Ya.,Podolian A.O.,Chupryna R.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference71 articles.

1. Effect of 8 Mev electrons on Au/n–Si Schottky diodes;Rao;Int J Pure Appl Phys,2009

2. The role of 60Co γ–ray irradiation on the interface states and series resistance in MIS structures;İlke Taşçioğlu;Radiat Phys Chem,2010

3. Analysis of interface states and series resistance at MIS structure irradiated under 60Co γ–rays;Tataroğlu;Nucl Instrum Methods Phys Res Sect A,2007

4. Non-monotonic γ– ray influence on Mo/n-Si Schottky barrier structure properties;Olikh;IEEE Trans Nucl Sci,2013

5. Recovery of electrical characteristics of Au/n–Si Schottky junction under 60Co gamma irradiation;Verma;IEEE Trans Device Mater Reliab,2014

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