Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap-Reference-Cited by-同舟云学术

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

Published:2008-11-15 Issue:10 Volume:104 Page:103523
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reckinger Nicolas,Tang Xiaohui,Bayot Vincent,Yarekha Dmitri A.,Dubois Emmanuel,Godey Sylvie,Wallart Xavier,Larrieu Guilhem,Łaszcz Adam,Ratajczak Jacek,Jacques Pascal J.,Raskin Jean-Pierre

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3010305

Reference33 articles.

1. Overview and status of metal S/D Schottky-barrier MOSFET technology

2. Performance advantage of schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate cmos

3. Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance

4. Electronic transport properties of epitaxial erbium silicide/silicon heterostructures

5. Conduction mechanisms in erbium silicide Schottky diodes

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