Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1614441
Reference11 articles.
1. Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors
2. Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor
3. A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate
4. New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
5. Simulation of Schottky barrier tunnel transistor using simple boundary condition
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