Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor-Reference-Cited by-同舟云学术

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Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor

Published:2002-06-01 Issue:Part 2, No. 6A Volume:41 Page:L626-L628
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Horng-Chih,Wang Meng-Fan,Hou Fu-Ju,Liu Jan-Tsai,Huang Tiao-Yuan,Sze Simon M.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=6A/a=L626/pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States;IEEE Electron Device Letters;2020-07

2. Low Temperature Characteristics of Schottky Barrier Single Electron and Single Hole Transistors;ETRI Journal;2012-12-01

3. Characteristics of Schottky barrier silicon nanocluster floating gate flash memory;Thin Solid Films;2011-07

4. Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-07

5. Characteristics of polycrystalline silicon Schottky barrier thin film transistors fabricated using metallic junction source/drain with erbium silicide and platinum silicide;Applied Physics Letters;2009-02-02

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