Epitaxial regrowth of Ar‐implanted amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324415
Reference9 articles.
1. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
2. Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in Si
3. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
4. Comparative study of annealed neon‐, argon‐, and krypton‐ion implantation damage in silicon
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