Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate-Reference-Cited by-同舟云学术

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

Published:2021-06-01 Issue:6 Volume:11 Page:065229
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sun Yanxiao¹^ORCID,Niu Gang¹^ORCID,Ren Wei¹^ORCID,Zhao Jinyan¹,Wang Yankun¹^ORCID,Wu Heping¹,Jiang Luyue¹,Dai Liyan¹^ORCID,Xie Ya-Hong²^ORCID,Rojo Romeo Pedro³,Bouaziz Jordan³^ORCID,Vilquin Bertrand³^ORCID

Affiliation:

1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, No. 28, Xianning West Road, Xi’an 710049, Shaanxi, People’s Republic of China

2. Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90024, USA

3. Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully Cedex, France

Funder

Key R&D Program of Shaanxi Province of China

Fundamental Research Funds for the Central Universities

“111 Project” of China

Natural Sciences and Engineering Research Council of Canada

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0055574

Reference34 articles.