Hysteresis and turn-on voltage tailoring of indium gallium zinc oxide transistors by employing a sandwiched structure with indium oxide-Reference-Cited by-同舟云学术

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Hysteresis and turn-on voltage tailoring of indium gallium zinc oxide transistors by employing a sandwiched structure with indium oxide

Published:2022-09 Issue: Volume:322 Page:132504
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Lee Jae-Yun,Tarsoly Gergely,Yoo Suchang,Shan Fei,Gyoon Ryu Heung,Choi Seungkeun,Jeong Yong Jin,Kim Sung-Jin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. High-Mobility Transparent p-Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics;Yamada;Adv. Electron. Mater.,2017

2. Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors;Park;Ceram. Int.,2021

3. Characterization of dielectric layers grown at low temperature by atomic layer deposition;Gieraltowska;Thin Solid Films,2015

4. Ultralow-Voltage Field-Effect Transistors Using Nanometer-Thick Transparent Amorphous Indium–Gallium–Zinc Oxide Films;Mukherjee;ACS Appl. Nano Mater.,2021

5. High-Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition;Allemang;Adv. Electron. Mater.,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adaptive Neural Control of Constrained MIMO Nonlinear Systems With Asymmetric Input Saturation and Dead Zone;IEEE Transactions on Neural Networks and Learning Systems;2023

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