Ultralow-Voltage Field-Effect Transistors Using Nanometer-Thick Transparent Amorphous Indium–Gallium–Zinc Oxide Films-Reference-Cited by-同舟云学术

Ultralow-Voltage Field-Effect Transistors Using Nanometer-Thick Transparent Amorphous Indium–Gallium–Zinc Oxide Films

Published:2021-08-06 Issue:8 Volume:4 Page:8050-8058
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Mukherjee Arka¹,Ottapilakkal Vishnu¹,Sagar Srikrishna¹,Das Bikas C.¹^ORCID

Affiliation:

1. Emerging Nanoelectronic Devices Research Laboratory (eNDR Lab), School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram (IISER TVM), Maruthamala PO, Vithura, Thiruvananthapuram 695551, Kerala, India

Funder

University Grants Commission

Science and Engineering Research Board

UK-India Education and Research Initiative

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c01326

Reference47 articles.

1. Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide Memristors

2. CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

3. Memory and Information Processing in Neuromorphic Systems

4. A CMOS silicon spin qubit

5. Steep-slope hysteresis-free negative capacitance MoS2 transistors

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