Effects of La Doping on Persistent Photoconductivity of Solution-Processed InZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

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Effects of La Doping on Persistent Photoconductivity of Solution-Processed InZnO Thin-Film Transistors

Published:2024 Issue: Volume: Page:1-6
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zheng Yu¹,Wu Zhichen¹,Tong Haochen¹,Zang Zhigang¹^ORCID,Cai Wensi¹^ORCID

Affiliation:

1. Ministry of Education, Key Laboratory of Optoelectronic Technology Systems, Chongqing University, Chongqing, China

Funder

National Natural Science Foundation of China

Chongqing Natural Science Foundation

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/4358746/10649884.pdf?arnumber=10649884

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