Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
https://link.springer.com/content/pdf/10.1007/s42835-023-01689-4.pdf
Reference26 articles.
1. Sun Y et al (2021) Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate. AIP Adv 11(6):065229. https://doi.org/10.1063/5.0055574
2. Zhang Y, Lin Y, He G, Ge B, Liu W (2020) "Balanced performance improvement of a-InGaZnO thin-film transistors using ALD-derived Al2O3-passivated high-k HfGdOx dielectrics (in English). ACS Appl Electron Mater 2(11):3728–3740. https://doi.org/10.1021/acsaelm.0c00763
3. Park J-H, Seok H-J, Jung SH, Cho HK, Kim H-K (2021) Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors. Ceram Int 47(3):3149–3158. https://doi.org/10.1016/j.ceramint.2020.09.152
4. Zhang L, Wei J, Zhou K, Wan C, Sun H (2020) Highly transparent IGZO-TFTs uses IGZO source and drain electrodes with a composite insulation layer structure. Optik 204:163654. https://doi.org/10.1016/j.ijleo.2019.163654
5. Nayak PK, Caraveo-Frescas J, Wang Z, Hedhili MN, Wang Q, Alshareef HN (2014) Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Sci Rep 4:4672
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