Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors-Reference-Cited by-同舟云学术

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

Author:

Chuang Hsun-Jen¹,Chamlagain Bhim¹,Koehler Michael²,Perera Meeghage Madusanka¹,Yan Jiaqiang²³,Mandrus David²³,Tománek David⁴,Zhou Zhixian¹

Affiliation:

1. Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48201, United States

2. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States

3. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

4. Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States

Funder

Gordon and Betty Moore Foundation

Air Force Office of Scientific Research

Wayne State University

National Science Foundation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference47 articles.

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