High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems-Reference-Cited by-同舟云学术

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

Published:2013-05-15 Issue:6 Volume:7 Page:5446-5452
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chang Hsiao-Yu¹,Yang Shixuan²,Lee Jongho¹,Tao Li¹,Hwang Wan-Sik³,Jena Debdeep³,Lu Nanshu²,Akinwande Deji¹

Affiliation:

1. Microelectronics Research Center and the Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States

2. Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, Texas 78712, United States

3. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn401429w

Reference36 articles.

1. Flexible Electronics: The Next Ubiquitous Platform

2. Macroelectronics: Perspectives on Technology and Applications

3. Multi-finger flexible graphene field effect transistors with high bendability

4. Printed Organic Semiconducting Devices

5. The rise of graphene

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