Defect production in Si(100) by19F,28Si,40Ar, and131Xe implantation at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349251
Reference16 articles.
1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
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