Detailed microscopic analysis of self-interstitial aggregation in silicon. I. Direct molecular dynamics simulations of aggregation
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.045205/fulltext
Reference69 articles.
1. Detection of extended interstitial chains in ion‐damaged silicon
2. A systematic analysis of defects in ion-implanted silicon
3. On the relation between dopant anomalous diffusion in Si and end-of-range defects
4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
5. Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon
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