Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates

Published:2015-10-05 Issue:14 Volume:107 Page:142102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kasahara K.¹,Nagatomi Y.²,Yamamoto K.³,Higashi H.¹⁴,Nakano M.⁴,Yamada S.¹⁴,Wang D.²,Nakashima H.³,Hamaya K.¹⁴

Affiliation:

1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan

2. Interdisciplinary Graduate School of Engineering Science, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

3. Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

4. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4932376

Reference34 articles.

1. 21.1: Invited Paper: CG Silicon Technology and Development of System on Panel

2. Flexible Flat Panel Displays

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Material characteristics and applications of transparent amorphous oxide semiconductors

5. High hole and electron mobilities in nanocrystalline silicon thin-film transistors

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Au-induced crystallization of amorphous Ge thin films: An indication of the existence of a recrystallization process during growth at deep subeutectic temperature;Journal of Alloys and Compounds;2024-12

2. Grain-Boundary-Aligned Ge Thin Films Formed by Au-Induced Lateral Crystallization with a Multilayer Structure;Crystal Growth & Design;2024-05-02

3. Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review;Advanced Electronic Materials;2024-05

4. Au-Induced Crystallization of Amorphous Ge Thin Films: An Indication of the Existence of a Recrystallization Process During Growth at Deep Subeutectic Temperature;2024

5. Fabrication of an atomically smooth Ge(111) surface by Au-induced crystallization at 170 °C;Applied Physics Letters;2023-04-24

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3