High hole and electron mobilities in nanocrystalline silicon thin-film transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing
2. Low-Temperature Polycrystalline Silicon Thin-Film Transist or Technologies for System-on-Glass Displays
3. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C
4. Recent progress of Cat-CVD research in Japan—bridging between the first and second Cat-CVD conferences
5. Thin-film transistors on plastic and glass substrates using silicon deposited by microwave plasma ECR-CVD
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1. Effectiveness of Light Source on Detecting Thin Film Transistor;Crystals;2018-10-21
2. Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °C;Journal of Applied Physics;2018-06-07
3. A crystalline germanium flexible thin-film transistor;Applied Physics Letters;2017-11-27
4. Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates;Applied Physics Letters;2015-10-05
5. Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors;Surface and Coatings Technology;2013-11
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