Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1435798
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1. Prospects for Active Matrix Displays on Plastic
2. An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering
3. a-Si:H TFTs Made on Polyimide Foil by PE-CVD at 150°C
4. Amorphous silicon thin-film transistors on compliant polyimide foil substrates
5. 120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates
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