3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits-Reference-Cited by-同舟云学术

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3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Published:2016-05 Issue:5 Volume:6 Page:055208
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Li Chi-Kang¹,Wu Chen-Kuo¹,Hsu Chung-Cheng¹,Lu Li-Shuo¹,Li Heng²,Lu Tien-Chang²^ORCID,Wu Yuh-Renn¹^ORCID

Affiliation:

1. Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan

2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4950771

Reference36 articles.

1. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

2. Modeling of threading dislocation reduction in growing GaN layers

3. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

4. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

5. Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective;APL Materials;2024-08-01

2. Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes;Applied Physics Letters;2024-07-22

3. Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation;Physical Review Applied;2024-06-17

4. Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs;Applied Physics Letters;2024-04-22

5. Mechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation;ACS Omega;2024-01-29

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