Modeling of threading dislocation reduction in growing GaN layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
2. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
3. Scattering of electrons at threading dislocations in GaN
4. Electrical characterization of GaN p-n junctions with and without threading dislocations
5. Dislocation motion in GaN light-emitting devices and its effect on device lifetime
Cited by 164 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors;Materials Science in Semiconductor Processing;2024-03
2. Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown On Ultrathin Step-bunched AlN Templates;Crystal Growth & Design;2023-12-06
3. Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction;Microscopy and Microanalysis;2023-11-08
4. Reducing GaN crystal dislocations through lateral growth on uneven seed crystal surfaces using the Na-flux method;Japanese Journal of Applied Physics;2023-10-01
5. Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates;Journal of Applied Physics;2023-04-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3