1.3 μm lasers with AlInAs-capped self-assembled quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632533
Reference13 articles.
1. High temperature performance of self-organised quantum dot laser with stacked p-doped active region
2. Importance of Auger recombination in InAs 1.3 [micro sign]m quantum dot lasers
3. Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
4. Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
5. Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
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1. Enhanced temperature stability of threshold current of InAs/GaAs quantum dot lasers by AlGaAs lateral potential barrier layers;Optics Express;2023-09-06
2. Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths;Crystal Research and Technology;2014-03-25
3. Design and growth of metamorphic InAs/InGaAs quantum dots for single photon emission in the telecom window;CrystEngComm;2012
4. Effects of ultra-low Al alloying In(Al)As layer on the formation and evolution of InAs/GaAs quantum dots;Journal of Applied Physics;2011-05
5. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer;Nanotechnology;2010-06-02
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