Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths
Author:
Affiliation:
1. IMEM-CNR; Parco Area delle Scienze; 37/a I-43100 Parma Italy
2. Optics and Quantum Comunications group; ITEAM; UPV; Valencia Spain
3. Instituto de Ciencia de los Materiales; Universitat de València; P.O. Box 22085 46071 Valencia Spain
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
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5. 1.59μm room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range;Physical Review Applied;2023-10-04
2. Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy;Materials;2021-10-21
3. Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band;Scientific Reports;2020-12
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