1.59μm room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2937095
Reference23 articles.
1. SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications
2. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
3. Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
4. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
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