Ferroelectric field-effect transistors based on multi-walled carbon nanotube micron-wide stripe arrays-Reference-Cited by-同舟云学术

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Ferroelectric field-effect transistors based on multi-walled carbon nanotube micron-wide stripe arrays

Published:2014-08-04 Issue:5 Volume:105 Page:053506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Song H. J.¹²,Liu P. P.¹²,Zhong X. L.¹²,Li B.¹²,Chen T.¹²,Wang F.¹²,Wang J. B.¹²,Zhou Y. C.¹²

Affiliation:

1. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Hunan Xiangtan 411105, China

2. Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan Xiangtan 411105, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892536

Reference25 articles.

1. Ferroelectric Field Effect Transistors for Memory Applications

2. Applications of Modern Ferroelectrics

3. Ferroelectric thin films: Review of materials, properties, and applications

4. The electrical and switching properties of a metal-ferroelectric (Bi3.15Nd0.85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode

5. Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer;Nanoscale Research Letters;2018-04-27

2. Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating;Current Applied Physics;2018-03

3. Top electrode-dependent retention characteristics of thin-film transistors with carbon nanotube/(Bi,Nd) 4 Ti 3 O 12 structure;Materials & Design;2016-06

4. Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates;RSC Adv.;2014

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