Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates-Reference-Cited by-同舟云学术

Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates

Published:2014 Issue:105 Volume:4 Page:60497-60501
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Song H. J.¹²³⁴²,Ding T.¹²³⁴²,Zhong X. L.¹²³⁴²,Wang J. B.¹²³⁴²,Li B.¹²³⁴²,Zhang Y.¹²³,Tan C. B.¹²³⁴²,Zhou Y. C.¹²³

Affiliation:

1. School of Materials Science and Engineering

2. Xiangtan University

3. Xiangtan 411105, China

4. National-Provincial Laboratory of Special Function Thin Film Materials

Abstract

Ferroelectric-gate thin-film transistors (FGTs) with a stacked oxide structure of ZnO/Bi_3.15Nd_0.85Ti₃O₁₂ (BNT)/LaNiO₃ (LNO) on Si substrates have been prepared and characterized.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA11952E

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