Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer-Reference-Cited by-同舟云学术

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Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Published:2018-04-27 Issue:1 Volume:13 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Tan Qiuhong,Wang Qianjin,Liu Yingkai,Yan Hailong,Cai Wude,Yang Zhikun

Funder

National Natural Science Foundation of China

Applied Basic Research Foundation of Yunnan Province

Yunnan Provincial Science and Technology Department

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-018-2534-1.pdf

Reference28 articles.

1. Wang XD, Tang MH, Chen Y et al (2016) Flexible graphene field effect transistor with ferroelectric polymer gate. Opt Quant Electron 48:345

2. Scott JF (2007) Applications of modern ferroelectrics. Science 315:954–959

3. Tong X, Ashalley E, Lin F, Li HD et al (2015) Advances in MoS2-based field effect transistors (FETs). Nano-Micro Lett 7:203

4. Choi YS, Sung J, Kang SJ et al (2013) Control of current hysteresis of networked single-walled carbon nanotube transistors by a ferroelectric polymer gate insulator. Adv Funct Mater 23:1120–1128

5. Blaser C, Esposito V, Paruch P (2013) Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices. Appl Phys Lett 102:223503

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wurtzite and fluorite ferroelectric materials for electronic memory;Nature Nanotechnology;2023-04-27

2. Edge-Based Two-Dimensional α-In₂Se₃–MoS₂ Ferroelectric Field Effect Device;ACS Applied Materials & Interfaces;2023-03-31

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