Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809596
Reference33 articles.
1. Single-Wall Carbon Nanotube Field Effect Transistors with Non-Volatile Memory Operation
2. Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor
3. Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes
4. Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films
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3. Top electrode-dependent retention characteristics of thin-film transistors with carbon nanotube/(Bi,Nd) 4 Ti 3 O 12 structure;Materials & Design;2016-06
4. Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations;Journal of Physics: Condensed Matter;2016-02-16
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