Edge-Based Two-Dimensional α-In2Se3–MoS2 Ferroelectric Field Effect Device-Reference-Cited by-同舟云学术

Edge-Based Two-Dimensional α-In₂Se₃–MoS₂ Ferroelectric Field Effect Device

Published:2023-03-31 Issue:14 Volume:15 Page:18505-18515
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Dutta Debopriya¹^ORCID,Mukherjee Subhrajit¹^ORCID,Uzhansky Michael¹^ORCID,Mohapatra Pranab K.²,Ismach Ariel²^ORCID,Koren Elad¹^ORCID

Affiliation:

1. Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel

2. Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel

Funder

Israel Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00590

Reference69 articles.

1. Long-term stability of mechanically exfoliated MoS2 flakes

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3. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

4. Mobility engineering and a metal–insulator transition in monolayer MoS2

5. High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

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