Structural and Electronic Response of Multigap N-Doped In<sub>2</sub>Se<sub>3</sub>: A Prototypical Material for Broad Spectral Optical Devices-Reference-Cited by-同舟云学术

Structural and Electronic Response of Multigap N-Doped In₂Se₃: A Prototypical Material for Broad Spectral Optical Devices

Published:2024-09-06 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Rodrigues-Fontenele Guilherme¹^ORCID,Fontenele Gabriel¹,Valentim Mirela R.²^ORCID,Freitas Luisa V. C.¹,Rodrigues-Junior Gilberto³,Magalhães-Paniago Rogério¹^ORCID,Malachias Angelo¹^ORCID

Affiliation:

1. Physics Department, Federal University of Minas Gerais (UFMG), Belo Horizonte, Minas Gerais 30123-970, Brazil

2. Institute of Physics, State University of Campinas (UNICAMP), Campinas, São Paulo 13083-859, Brazil

3. Physics Department, Federal University of Viçosa (UFV), Viçosa, Minas Gerais 36570-900, Brazil

Funder

Funda??o de Amparo ? Pesquisa do Estado de Minas Gerais

Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico

Centro Nacional de Pesquisa em Energia e Materiais

Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c08610

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4. High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets

5. Solution‐Processable 2D α‐In 2 Se 3 as an Efficient Hole Transport Layer for High‐Performance and Stable Polymer Solar Cells