Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications-Reference-Cited by-同舟云学术

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Published:2019-05-17 Issue:8 Volume:4 Page:1900108
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Yang Zhibin¹²,Hao Jianhua²^ORCID

Affiliation:

1. Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, and the Key Laboratory of Optoelectronics Information and TechnologyMinistry of EducationTianjin University Tianjin 300072 P. R. China

2. Department of Applied PhysicsThe Hong Kong Polytechnic University Kowloon Hong Kong P. R. China

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.201900108

Reference159 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. 2D materials and van der Waals heterostructures

3. Mobility engineering and a metal–insulator transition in monolayer MoS2

4. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

5. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

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