High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4801861
Reference31 articles.
1. Optical-absorption spectra of inorganic fullerenelikeMS2(M=Mo,W)
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Valley-selective circular dichroism of monolayer molybdenum disulphide
4. Single-layer MoS2 transistors
5. Integrated Circuits Based on Bilayer MoS2 Transistors
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