Thermal pulse annealing of boron‐implanted HgCdTe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93665
Reference7 articles.
1. Ion Implantation Study of HgCdTe
2. Damage and lattice location studies in Hg implanted Hg1–xCdxTe
3. cw CO2and ruby laser annealing of ion‐implanted Hg1−xCdxTe
4. Boron ion implantation in Hg1−xCdxTe
5. Ion implantation doping of Cd0.2Hg0.8Te for infrared detectors
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2. Doping effect of boron in Hg0.75Cd0.25Te: first-principles study;Acta Physica Sinica;2012
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4. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01
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