Ion Implantation Study of HgCdTe-Reference-Cited by-同舟云学术

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Ion Implantation Study of HgCdTe

Published:1980-01-01 Issue:S1 Volume:19 Page:495
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bubulac L. O.,Tennant W. E.,Shin S. H.,Wang C. C.,Lanir M.,Gertner E. R.,Marshall E. D.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the electrophysical properties of nanostructured porous germanium as a promising material for electrodes of electrochemical capacitors;E3S Web of Conferences;2021

2. Development of Electron Beam Induced Current Characterization of HgCdTe Based Photodiodes;Journal of Electronic Materials;2019-03-25

3. Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions;Russian Physics Journal;2018-10

4. Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition;Journal of Physics: Conference Series;2016-08

5. Radiation defect formation in graded-band-gap epitaxial structures Hg1−xCdxTe after boron ion implantation;Semiconductor Science and Technology;2008-04-25

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