Boron ion implantation in Hg1−xCdxTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330641
Reference14 articles.
1. Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te
2. Properties of ion-implanted junctions in mercury—cadmium—telluride
3. Ion implantation doping of Cd0.2Hg0.8Te for infrared detectors
4. Range and range straggling of ion-implanted boron in Cd0.2Hg0.8Te
5. High‐performance backside‐illuminated Hg0.78Cd0.22Te/CdTe (λCO=10 μm) planar diodes
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1. 2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe;Journal of Electronic Materials;2023-02-06
2. Study of lateral junction drive-in after annealing in ion implanted HgCdTe;Journal of Vacuum Science & Technology B;2022-12
3. Raman scattering and electrical studies of the phase stability in the Hg1−xCdxTe;Applied Physics A;2016-04-26
4. Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe;Journal of Electronic Materials;2013-07-11
5. Doping effect of boron in Hg0.75Cd0.25Te: first-principles study;Acta Physica Sinica;2012
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