Affiliation:
1. Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, Shanghai 200083, People’s Republic of China
Abstract
Lateral junction drive-in after annealing in an n on p medium wave HgCdTe was studied. A method through testing the current voltage characteristic of an adjacent injection area was used to directly measure the lateral junction drive-in. The experimental results showed that under a standard annealing condition, the lateral drive-in was about 0.5 μm. While the annealing conditions were 88% and 112% standard temperature, the lateral drive-in were 0 and 3.25 μm, respectively, which showed a strong relationship between temperature and lateral drive-in extent. A 2D diffusion model was developed to account for the temperature dependence of lateral junction drive-in. This work suggests a simple and effective method for lateral drive-in testing and provides a useful 2D model for simulation and optimization of HgCdTe junction formation.
Funder
National Natural Science Foundation of China
Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Shanghai Sailing Program
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials