Damage and lattice location studies in Hg implanted Hg1–xCdxTe
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337578008209261
Reference15 articles.
1. TYPE CONVERSION ANDn‐pJUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENT
2. (Hg,Cd)Te Photodiode Laser Receivers for the 1–3-μ Spectral Region
3. p-n Junction characteristics and ultimate performances of high quality 8–14 μm Hg1−xCdxTe implanted photodetectors
4. Energy level diagram of high-efficiency CdxHg1−xTe Photo-Diodes
5. Willardson, R. K. and Beer, A. C. 1970.Semiconductor and semimetuls, Vol. 5, p. 175Academic Press.
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2. Study of damage induced by room-temperature Al ion implantation in Hg0.8Cd0.2Te by x-ray diffuse scattering;Journal of Applied Physics;1997-07-15
3. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01
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