Annealing kinetics of radiation defects in boron-implanted p-Hg1−xCdxTe
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aac0a1/pdf
Reference20 articles.
1. HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements
2. Ion implantation and ion milling in MBE Hg1−xCdxTe films
3. Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
4. Status of p-on-n Arsenic-Implanted HgCdTe Technologies
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1. 2D Modeling of the Annealing Process After Ion Implantation in n-on-p HgCdTe;Journal of Electronic Materials;2023-02-06
2. II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023
3. Unipolar Semiconductor Barrier Structures for Infrared Photodetector Arrays (Review);Journal of Communications Technology and Electronics;2021-09
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