II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays
Author:
Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-20510-1_6
Reference87 articles.
1. Rogalski А (2019) Infrared and terahertz detectors, 3rd edn. Taylor & Francis Group, LLC
2. Kinch MA (2015) The future of infrared; III–Vs or HgCdTe? J Electron Mater 44(9):2969–2976
3. Gu R, Antoszewski J, Lei W, Madni I, Umana-Membrenao G, Faraone L (2017) MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors. J Cryst Growth 468:216–219
4. Maimon S, Wicks GW (2006) nBn detector, an infrared detector with reduced dark current and higher operating temperature. Appl Phys Lett 89:151109
5. Kopytko M, Keblowski A, Gawron W, Madejczyk P (2015) Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors. Opto-Electron Rev 23(2):143–148
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