MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors-Reference-Cited by-同舟云学术

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MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors

Published:2017-06 Issue: Volume:468 Page:216-219
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gu R.,Antoszewski J.,Lei W.,Madni I.,Umana-Membrenao G.,Faraone L.

Funder

Australian Research Council

Universities Australia DADD German Research Cooperation Program

UWA Research Collaboration Awards

Australian National Fabrication Facility

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: a review of recent progress;de Lyon;J. Electron. Mater.,1999

2. MBE growth and device processing of MWIR HgCdTe on large area Si substrates;Brill;J. Electron. Mater.,2001

3. Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates;Varesi;J. Electron. Mater.,2001

4. Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays;Ferret;J. Electron. Mater.,2000

5. Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors;Zanatta;J. Electron. Mater.,2006

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1. Investigation of structural and optical characteristics of low temperature nucleated thick ZnTe epitaxy on GaAs (211) substrates by MBE;Optical Materials;2024-10

2. Defect Analysis of MBE Reactor-Grown HgCdTe on Si, GaAs, GaSb, and CZT Substrates Through the TNL-Epigrow Simulator;Journal of Electronic Materials;2024-04-22

3. Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations;Applied Surface Science;2024-03

4. Unipolar barrier structures based on n-HgCdTe with superlattices as a barrier [Review];Journal of Optical Technology;2024-02-01

5. AlInAsSb Geiger-mode SWIR and eSWIR SPADs with high avalanche probability;Optics Express;2024-01-05

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