Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors

Abstract

AbstractThe performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 μm fabricated using metaloorganic chemi- cal vapour deposition operated at high temperatures is presented. The detectors’ architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-BThe devices with a p-type cap contact exhibit very low dark current densities in the range of (2÷3)×10