Damage‐induced uphill diffusion of implanted Mg and Be in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102743
Reference14 articles.
1. Annealing Behavior of GaAs Ion Implanted with p‐Type Dopants
2. Comparison of electrical and atomic profiles of Mg24 and Zn64 implanted gaas samples and GaAs-GaAIAs heterostructures for bipolar transistor applications
3. Annealing Behavior of Be- and Mg-Implants in GaAs
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3. Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs;physica status solidi (b);2006-10
4. Electrical activation of carbon in GaAs: Implantation temperature effects;Applied Physics Letters;2001-03-19
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