Macroscopic description of the diffusion of interstitial impurity atoms considering the influence of elastic stress on the drift of interstitial species-Reference-Cited by-同舟云学术

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Macroscopic description of the diffusion of interstitial impurity atoms considering the influence of elastic stress on the drift of interstitial species

Published:2008-04 Issue:10 Volume:88 Page:1477-1491
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Velichko O.I.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786430802192104

Reference53 articles.

1. Modeling of dopant diffusion in silicon: An effective diffusivity approach including point‐defect couplings

2. Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism

3. Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Different shapes of impurity concentration profiles formed by long-range interstitial migration;International Journal of Computational Materials Science and Engineering;2016-09

2. Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms;Philosophical Magazine;2016-07-10

3. Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates;Physica B: Condensed Matter;2012-06

4. Simulation of the diffusion of point defects in structures with local elastic stresses;Applied Mathematical Modelling;2011-03

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